KIIT Deemed to be University SDT Quiz (Activity-5) Topic: Module-4 and Module-6 âąī¸ 20:00 đ 10 Questions 1 Registration & Summary âšī¸ Quiz Summary Main Topic Topic: Module-4 and Module-6 Questions 10 Items Time Limit 20 Minutes Negative Marking â None Name * Roll Number * Ready to begin? The timer starts immediately. đ Continue & Start Test 2 Quiz Questions Q1. Why did the semiconductor industry replace traditional silicon dioxide with High-k dielectrics for the transistor gate insulator? To increase the resistance of the gate To reduce the manufacturing cost To make the gate completely transparent To increase the physical thickness of the gate while maintaining high capacitance, thereby reducing quantum tunneling leakage Q2. In modern 3D NAND devices, what material is typically used to store the memory electrons, replacing the conductive polysilicon floating gate used in older 2D NAND? An insulating Charge Trap layer, usually Silicon Nitride A vacuum gap A copper layer A high-k hafnium layer Q3. What is the primary purpose of applying strain engineering, such as growing a Silicon Germanium (SiGe) layer in the source and drain regions of a PMOS transistor? To stretch or compress the silicon lattice in the channel to increase carrier mobility To increase the mechanical strength of the chip To reduce the cost of the silicon wafer To increase the breakdown voltage Q4. In the Design of Experiments (DOE), what is the primary goal of a screening experiment? To test the final packaged chip To calculate the exact non-linear curvature of a response surface To identify the vital few factors that have the most significant impact on the response out of a trivial many To completely optimize the manufacturing process yield Q5. What is the primary cause of RC delay in modern highly scaled integrated circuits? The time it takes for software to compile The resistance of the metal interconnects multiplied by the parasitic capacitance between adjacent wires The switching speed of the transistors The delay caused by the power supply Q6. On a standard SPC control chart, which of the following is considered an out-of-control signal requiring engineering intervention? Several points falling within the 1-sigma zone Data points fluctuating randomly around the mean A single point falling outside the 3-sigma control limits A normal bell-curve distribution of data Q7. Why did the semiconductor industry transition from Aluminum to Copper for metal interconnect lines? Copper has lower electrical resistivity and higher resistance to electromigration Copper is cheaper to mine Copper is easier to dry-etch than aluminum Copper does not oxidize Q8. In Statistical Process Control (SPC), what percentage of data falls within plus or minus 3 standard deviations from the mean in a perfectly normal distribution? 99.7 percent 95.4 percent 100 percent 68.2 percent Q9. Why are silicide materials (like NiSi or TiSi2) formed on top of the silicon source, drain, and gate regions? To increase the bandgap of the silicon To significantly reduce the contact resistance between the semiconductor and the metal interconnect vias To serve as a light-emitting layer To act as a protective barrier against moisture Q10. What is the main disadvantage of the LOCOS (Local Oxidation of Silicon) isolation technique that led to its replacement in advanced nodes? The formation of a bird's beak oxide encroachment It is too expensive to perform It uses toxic chemicals It requires extremely high pressures đ¯ Complete My Submission
